900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Advanced Power Electronics

AP09N20J Datasheet Preview

AP09N20J Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP09N20H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristics
D
Description
G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
200V
380mΩ
8.6A
G DS
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP09N20J) is available for low-
profile applications.
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
200
± 30
8.6
5.5
36
69
0.55
40
8.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
1.8
110
Unit
/W
/W
Data & specifications subject to change without notice
201112031
Free Datasheet http://www.datasheet4u.com/




Advanced Power Electronics

AP09N20J Datasheet Preview

AP09N20J Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP09N20H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
VDS=10V, ID=5A
VDS=200V, VGS=0V
VDS=160V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS= ± 30V
ID=8.6A
Gate-Source Charge
VDS=160V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=100V
Rise Time
ID=8.6A
Turn-off Delay Time
RG=10Ω,VGS=10V
Fall Time
RD=11.6Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
200 -
-V
- 0.24 - V/
- - 380 mΩ
2 - 4V
- 3.7 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 23 37 nC
-4
- nC
- 13
- nC
- 12 - ns
- 74 - ns
- 36 - ns
- 44 - ns
- 500 800 pF
- 90 - pF
- 40 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=8.6A, VGS=0V
IS=8.6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 225 - ns
- 2260 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=8.6A.
3.Pulse width <300us , duty cycle <2%.


Part Number AP09N20J
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
PDF Download

AP09N20J Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 AP09N20BGH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
2 AP09N20BGI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
3 AP09N20BGP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
4 AP09N20BGS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
5 AP09N20H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
6 AP09N20H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
7 AP09N20H-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
8 AP09N20J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
9 AP09N20J-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy