Datasheet Details
| Part number | AP09N50I |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 88.16 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP09N50I Download (PDF) |
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| Part number | AP09N50I |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 88.16 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP09N50I Download (PDF) |
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 500 +30 9 5.6 36 36.8 2 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 18 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W Data and specifications subject to change without notice 1 201107223 Free Datasheet http://www.datasheet4u.com/ AP09N50I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=400V, VGS=0V VGS=+30V, VDS=0V ID=6A VDS=400V VGS=10V VDD=250V ID=6A RG=50Ω,VGS=10V RD=42Ω VGS=0V VDS=25V f=1.0MHz Min.
AP09N50I RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 0.
| Part Number | Description |
|---|---|
| AP09N50I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N50P-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N50P-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20BGH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20BGI-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20BGP-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20BGS-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP09N20H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |