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Advanced Power Electronics

AP11N50I-HF Datasheet Preview

AP11N50I-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP11N50I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
D
S
BVDSS
RDS(ON)
ID
500V
0.68Ω
11A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
+30
11
5.6
40
40
50
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.2
65
Units
/W
/W
1
201401233




Advanced Power Electronics

AP11N50I-HF Datasheet Preview

AP11N50I-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP11N50I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=6A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
ID=6A
VDS=400V
VGS=10V
VDD=250V
ID=6A
RG=50Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
500 -
-
- - 0.68
2-4
-9-
- - 100
- - +100
- 43 69
-8-
- 20 -
- 36 -
- 53 -
- 230 -
- 60 -
- 1680 2600
- 160 -
- 15 -
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=6A, VGS=0V
IS=6A, VGS=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25
3.Pulse test
Min. Typ. Max. Units
- - 1.5 V
- 350 -
ns
- 5 - uC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP11N50I-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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