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Advanced Power Electronics

AP1203GMT-HF Datasheet Preview

AP1203GMT-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP1203GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
D
SO-8 Compatible
Fast Switching Performance
G
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
BVDSS
RDS(ON)
ID
30V
12mΩ
45A
D
D
D
D
S
S
S
G
PMPAK 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
PD@TA=25
EAS
TSTG
TJ
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
45
16
13
180
36.7
5
29
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data & specifications subject to change without notice
Value
3.4
25
Units
/W
/W
1
200905216
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Advanced Power Electronics

AP1203GMT-HF Datasheet Preview

AP1203GMT-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP1203GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
VGS=4.5V, ID=20A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=20A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V, VDS=0V
ID=10A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=20A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=0.75Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
30 - - V
- - 12 m
- - 16 m
0.8 - 2.5 V
- 19.7 -
S
- - 1 uA
- - 25 uA
- - +100 nA
- 13.2 21 nC
- 2.2 - nC
- 7.8 - nC
- 9 - ns
- 86 - ns
- 23 - ns
- 7 - ns
- 760 1220 pF
- 190 - pF
- 145 - pF
- 1.4 2.1
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=4.2A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 26 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec
4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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Part Number AP1203GMT-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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