AP15T15GI-HF Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for mercial-industrial through hole applications. TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Rating 150 +20 10 6 40 31.3 1.92 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201101051 Data & specifications subject to change without notice Free Datasheet http://../ Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250u A VGS=10V, ID=8A VGS=4.5V, ID=5A VDS=VGS, ID=250u A VDS=10V, ID=8A VDS=120V, VGS=0V VGS=+20V, VDS=0V ID=8A VDS=120V VGS=10V VDS=75V ID=8A RG=1Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 150 1 - Typ. 10 24 4 10 7 12 20 4 80 55 1.2 Max. Units 150 250 3 25 +100 38 2.4 V mΩ mΩ V S u A n A n C n C n C ns ns ns ns p F p F p F Ω Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 1000 1600 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by Max. junction...