AP15T15GM-HF Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 150 +20 2.6 2.1 10 2.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit ℃/W 1 201105031 Data and specifications subject to change without notice Free Datasheet http://../ Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=250u A VGS=10V, ID=2A VGS=4.5V, ID=1A VDS=VGS, ID=250u A VDS=10V, ID=2A VDS=120V, VGS=0V VGS=+20V, VDS=0V ID=2A VDS=75V VGS=10V VDS=75V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=15V f=1.0MHz f=1.0MHz Min. 150 1 - Typ. 4 22.5 3.5 7.5 8 5.5 25 10 115 75 1.2 Max. Units 150 250 3 1 +100 36 2.4 V mΩ mΩ V S u A n A n C n C n C ns ns ns ns p F p F p F Ω Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 1050 1680 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage Test Conditions IS=1.9A, VGS=0V IS=8A, VGS=0V, d I/dt=100A/µs Mi...