AP15T20GH-HF Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-252 package is widely preferred for mercial-industrial surface mount applications and using infrared reflow technique and suited for high current application due to the low connection resistance. TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Rating 200 +20 10 6.1 26 62.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Value 2 62.5 Unit ℃/W ℃/W 1 201202291 Data & specifications subject to change without notice Free Datasheet http://../ Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Test Conditions VGS=0V, ID=250u A VGS=10V, ID=5A VGS=4.5V, ID=3A VDS=VGS, ID=250u A VDS=10V, ID=5A VDS=160V, VGS=0V VGS= +20V, VDS=0V ID=5A VDS=160V VGS=10V VDD=100V ID=5A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 200 1 Typ. 20 45 5.5 15 10 10 37 11 100 65 1.5 Max. Units 250 260 3 25 +100 72 3 V mΩ mΩ V S u A n A n C n C n C ns ns ns ns p F p F p F Ω o 1950 3120 Source-Drain...