AP15T25H-HF Datasheet | Advanced Power Electronics Corp

Description AP15T25 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current Rating 250 +20 8.7 5.6 34 62.5 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Value 2 62.5 Unit ℃/W ℃/W 1 201311181 Data & specifications subject to change without notice Free Datasheet http://../ Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Test Conditions VGS=0V, ID=250u A VGS=10V, ID=4A VDS=VGS, ID=250u A VDS=10V, ID=4A VDS=200V, VGS=0V VGS= +20V, VDS=0V ID=4A VDS=200V VGS=10V VDD=125V ID=4A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 250 2 Typ. 7 31 5.5 13 9 10 23 9 85 55 1.5 Max. Units 320...