Datasheet Details
| Part number | AP18T10AGH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 108.39 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP18T10AGH-HF Datasheet
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| Part number | AP18T10AGH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 108.39 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP18T10AGH-HF Datasheet
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G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 9 5.6 30 27.8 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.5 62.5 Units ℃/W ℃/W Data and specifications subject to change without notice 1 201006011 Free Datasheet http://www.datasheet4u.net/ AP18T10AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
AP18T10AGH-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
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