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AP18T10GJ-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP18T10GJ-HF datasheet PDF. This datasheet also covers the AP18T10GH-HF variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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Note: The manufacturer provides a single datasheet file (AP18T10GH-HF-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP18T10GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 160mΩ 9A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18T10GJ) are available for low-profile applications.