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AP18T10GP-HF-3 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

D (tab) G D S TO-220 (P) The TO-220 through-hole package is widely used in commercial and industrial applications where a small pcb footprint or an attached heatsink are required.

Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 100 ±20 9 Units V V A A A W °C °C 5.6 30 28 -55 to 150 -55 to 150 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.5 62 Unit °C/W °C/W Ordering Information AP18T10GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube) ©2011 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP18T10GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 100V 160mΩ.

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