Datasheet Details
| Part number | AP20N15GI-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 90.55 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP20N15GI-HF Datasheet
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| Part number | AP20N15GI-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 90.55 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP20N15GI-HF Datasheet
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 150 +20 20 12 80 34.7 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 65 Units ℃/W ℃/W 1 200903103 Data and specifications subject to change without notice AP20N15GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=1mA 2 Min.
AP20N15GI-HF Halogen-Free Product Advanced Power Electronics Corp.
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