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AP2306AGEN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is widely used for commercial-industrial applications.

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Datasheet Details

Part number AP2306AGEN
Manufacturer Advanced Power Electronics
File Size 119.50 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP2306AGEN RoHS-compliant Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 50mΩ 4.1A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +6 4.1 3.3 16 1.
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