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Advanced Power Electronics

AP2306AGEN Datasheet Preview

AP2306AGEN Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP2306AGEN
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 2.5V Gate Drive
Small Outline Package
Surface Mount Device
D
S
Description
SOT-23 G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
BVDSS
RDS(ON)
ID
G
30V
50mΩ
4.1A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TA=25
ID@TA=70
IDM
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
PD@TA=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
30
+6
4.1
3.3
16
1.38
-55 to 150
-55 to 150
Value
90
Units
V
V
A
A
A
W
Unit
/W
Data and specifications subject to change without notice
1
200812031




Advanced Power Electronics

AP2306AGEN Datasheet Preview

AP2306AGEN Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2306AGEN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=4.5V, ID=4A
VGS=2.5V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=3A
VDS=30V, VGS=0V
VGS=+6V
ID=3A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=5V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- - 50 m
- - 72 m
0.5 - 1.5 V
- 15 -
S
- - 10 uA
- - +30 uA
- 8.7 14 nC
- 1.3 - nC
- 3.5 - nC
- 65 - ns
- 130 -
ns
- 470 -
ns
- 290 -
ns
- 610 1000 pF
- 60 - pF
- 50 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 220 -
ns
- 600 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2306AGEN
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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