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AP2306CGN-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is widely used for all commercial-industrial applications.

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Datasheet preview – AP2306CGN-HF

Datasheet Details

Part number AP2306CGN-HF
Manufacturer Advanced Power Electronics
File Size 89.76 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP2306CGN-HF Datasheet
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Full PDF Text Transcription

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AP2306CGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS Compliant S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID D 20V 30mΩ 5.5A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 +12 5.5 4.4 20 1.
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