Datasheet Details
| Part number | AP2602GY-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.65 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP2602GY-HF Datasheet
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| Part number | AP2602GY-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.65 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP2602GY-HF Datasheet
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Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial-industrial applications.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 +12 6.3 5 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W 1 201102184 Data and specifications subject to change without notice AP2602GY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
AP2602GY-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Capable of 2.5V Gate Drive ▼ Lower On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free SOT-26 D S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G D D 20V 34mΩ 6.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AP2602 | Octave Remote Resistor-programmable Temperature Switches | BCD Semiconductor |
| Part Number | Description |
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