AP2605GY mosfet equivalent, p-channel enhancement mode power mosfet.
G S
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Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage .
D
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications.
G S
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