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AP2606AGY-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The S0T-26 package is widely used for commercial-industrial applications.

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Full PDF Text Transcription

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AP2606AGY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package ▼ RoHS Compliant & Halogen-Free D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET S BVDSS RDS(ON) G D 30V 28mΩ 7A ID SOT-26 D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +20 7 5.
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