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Advanced Power Electronics
Advanced Power Electronics

AP2607GY-HF-3 Datasheet Preview

AP2607GY-HF-3 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2607GY-HF-3 pdf
Advanced Power
Electronics Corp.
AP2607GY-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low Gate Charge
Small Footprint, Low Profile
RoHS-compliant, halogen-free
D
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The SOT-26 package is widely used for commercial and industrial
applications, where space is at a premium.
BV DSS
R DS(ON)
ID
-20V
52m
-5A
S
D
D
SOT-26 (Y)
G
D
D
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA=70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Rating
-20
±8
-5
-4
-20
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP2607GY-HF-3TR : in RoHS-compliant halogen-free SOT-26 shipped on tape and reel (3000pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201005142-3 1/5



Advanced Power Electronics
Advanced Power Electronics

AP2607GY-HF-3 Datasheet Preview

AP2607GY-HF-3 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2607GY-HF-3 pdf
Advanced Power
Electronics Corp.
AP2607GY-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Test Conditions
VGS=0V, ID=-250uA
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-1A
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=55oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-5V, ID=-5A
VDS=-16V, VGS=0V
VDS=-16V ,VGS=0V
VGS= ±8V
ID=-5A
VDS=-10V
VGS=-4.5V
VDS=-10V
ID=-1A
RG=3.3, VGS=-5V
RD=10
VGS=0V
VDS=-20V
f=1.0MHz
Source-Drain Diode
Min. Typ. Max. Units
-20 -
-V
- - 52 m
- - 65 m
- - 90 m
-0.3 -
-1 V
- 9 -S
- - -1 uA
- - -10 uA
- - ±100 nA
- 13 21 nC
- 2.1 - nC
- 5 - nC
- 10 - ns
- 18 - ns
- 23 - ns
- 31 - ns
- 1030 1650 pF
- 120 - pF
- 105 - pF
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 29 - ns
- 20 - nC
Notes:
1.Pulse width limited maximum junction temperature.
2.Pulse test - pulse width < 300µs , duty cycle < 2%
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 156 °C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5


Part Number AP2607GY-HF-3
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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