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AP2609GY-HF-3 Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

D D G D The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium.

SOT-26 D Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±12 Units V V A A A W W/ °C °C °C -5.1 -4.0 -20 2 0.016 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 62.5 Unit °C/W Ordering Information AP2609GY-HF-3TR : in RoHS-compliant halogen-free SOT-26 shipped on tape and reel (3000pcs/reel) ©2013 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP2609GY-HF-3 P-channel Enhancement-mode Power MOSFET Fast Switching Characteristics Low Gate Charge Small Footprint, Low Profile RoHS-compliant, halogen-free D BV DSS R DS(ON) ID -20V 57mΩ -5.