AP2626GY mosfet equivalent, n-channel enhancement mode power mosfet.
G1
D1
G2 S1
D2 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
Drain-Sou.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
G1
D1.
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