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Advanced Power Electronics
Advanced Power Electronics

AP2761S-A-HF Datasheet Preview

AP2761S-A-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2761S-A-HF pdf
Advanced Power
Electronics Corp.
AP2761S-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
D
S
Description
AP2761S is specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.TO-263 type provide
high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
BVDSS
RDS(ON)
ID
650V
1Ω
10A
G D S TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
EAS
IAR
TSTG
TJ
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
+30
10
4.4
18
104
0.8
32
8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Data & specifications subject to change without notice
Value
1.2
40
Units
/W
/W
1
201001051



Advanced Power Electronics
Advanced Power Electronics

AP2761S-A-HF Datasheet Preview

AP2761S-A-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2761S-A-HF pdf
AP2761S-A-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=3.5A
VDS=VGS, ID=250uA
VDS=10V, ID=3.5A
VDS=600V, VGS=0V
VGS=+30V, VDS=0V
ID=10A
VDS=520V
VGS=10V
VDD=320V
ID=10A
RG=10,VGS=10V
RD=32
VGS=0V
VDS=25V
f=1.0MHz
650 - - V
- - 1Ω
2 - 4V
- 4.5 -
S
- - 25 uA
- - +100 nA
- 53 85 nC
- 10 - nC
- 15 - nC
- 16 - ns
- 20 - ns
- 82 - ns
- 36 - ns
- 2750 4430 pF
- 160 - pF
- 6 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 610 - ns
- 8.64 - µC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=8A.
3.Pulse test
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2761S-A-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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