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AP28G40GEJ - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Download the AP28G40GEJ datasheet PDF. This datasheet also covers the AP28G40GEH variant, as both devices belong to the same n-channel insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (AP28G40GEH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP28G40GEH N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G40GEM-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G40GEO N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G45EM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G45GEM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @ 2.5V 150 PD@TA=25℃ Maximum Power Dissipation 1.1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 . E Units V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.