AP28G40GEM-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp

Datasheet Details

Part number	AP28G40GEM-HF
Manufacturer	Advanced Power Electronics Corp
File Size	63.86 KB
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AP28G40GEM-HF Datasheet

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Advanced Power Electronics Corp. AP28G40GEM-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C SO-8 VCE ICP G E EE G 400V 150A C E Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range . 400 +6 150 1 -55 to 150 150 V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max.