AP28G45GEM - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp

Datasheet Details

Part number	AP28G45GEM
Manufacturer	Advanced Power Electronics Corp
File Size	70.80 KB
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AP28G45GEM Datasheet

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Advanced Power Electronics Corp. AP28G45GEM Pb Free Plating Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability ▼ 3.3V Gate Drive ▼ Strobe Flash Applications C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 450 ±6 ±8 130 2.5 -55 to 150 -55 to 150 Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max.