AP28G45GEO-HF Description
Advanced Power Electronics Corp. ±10 10 9 1.2 130 8240 125 Units uA uA V V nC nC nC ns ns µs µs pF pF pF ℃/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board.
AP28G45GEO-HF is N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR manufactured by Advanced Power Electronics Corp .
Advanced Power Electronics Corp. ±10 10 9 1.2 130 8240 125 Units uA uA V V nC nC nC ns ns µs µs pF pF pF ℃/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board.