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AP30G100W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • ▼ High speed switching ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A ▼ Industry Standard TO-3P Package ▼ RoHS Compliant G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes.

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Advanced Power Electronics Corp. AP30G100W RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High speed switching ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A ▼ Industry Standard TO-3P Package ▼ RoHS Compliant G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Notes: 1.Repetitive rating : Pulse width limited by max . junction temperature .