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AP30G40GEO-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power Electronics Corp. AP30G40GEO-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25oC1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.0V Maximum Power Dissipation Storage Temperature Range Junction Temperature Range Rating 400 +6 150 1 -55 to 150 -55 to 150 Units V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.