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AP30P10GI-HF-3 Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The AP30P10GI-HF-3 is in the TO-220CFM package, which is widely used for commercial and industrial applications, where a low PCB footprint and/or isolated tab mounting is required.

G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating -100 ±20 -25 -15 -80 31.3 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Units °C/W °C/W Ordering Information AP30P10GI-HF-3TR RoHS-compliant, halogen-free TO-220CFM, shipped in tubes.

Overview

Advanced Power Electronics Corp.

AP30P10GI-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -100V 80mΩ.

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