Datasheet Details
| Part number | AP3302H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 106.30 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AP3302H Datasheet
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| Part number | AP3302H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 106.30 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AP3302H Datasheet
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The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP3302J) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 ± 20 16 10 25 20 0.16 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
AP3302H/J Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement www.DataSheet4U.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP3302 | QUASI-RESONANT PWM CONTROLLER | Diodes |
| Part Number | Description |
|---|---|
| AP3302J | N-Channel MOSFET |
| AP3303H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3303J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GH-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GJ-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310GJ-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310H | P-Channel MOSFET |