Datasheet4U Logo Datasheet4U.com

AP3402GEJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP3402GEJ, a member of the AP3402GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

📥 Download Datasheet

Datasheet preview – AP3402GEJ

Datasheet Details

Part number AP3402GEJ
Manufacturer Advanced Power Electronics
File Size 67.38 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP3402GEJ Datasheet
Additional preview pages of the AP3402GEJ datasheet.

📁 Similar Datasheet

  • AP3402 - 2A STEP-DOWN DC-DC BUCK CONVERTER (Diodes)
  • AP3400EI - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP3401 - 1A STEP-DOWN DC - DC BUCK CONVERTER (Diodes)
  • AP3403 - 600mA STEP-DOWN DC/DC CONVERTER (Diodes)
  • AP3404CI - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP3404MI-L - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP3405 - 600mA Step-down DC/DC Converter (Diodes)
  • AP3406 - 650mA SYNCHRONOUS DC-DC BUCK CONVERTER (BCD Semiconductor)
  • AP34063 - UNIVERSAL DC/DC CONVERTER (Diodes Incorporated)
  • AP34063 - Universal DC/DC Converter (Anachip)
Other Datasheets by Advanced Power Electronics
  • AP3402GEH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP3403GH - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP3403GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP3405GH-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP30G100W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP30G120ASW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP30G120ASW-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP30G120BSW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
AP3402GEH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 35V 18mΩ 38A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3402GEJ) are available for low-profile applications.
Published: |