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AP3403GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP3403GJ datasheet PDF. This datasheet also covers the AP3403GH variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.

The TO-252/TO-251 package is universally used for all commercialindustrial application.

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Note: The manufacturer provides a single datasheet file (AP3403GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP3403GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3402GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3402GEJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3405GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30G100W N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP3403GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 200mΩ - 10A Description G D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is universally used for all commercialindustrial application. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating - 30 ± 20 -10 -8.6 -48 36.7 0.