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Advanced Power Electronics
Advanced Power Electronics

AP3986P Datasheet Preview

AP3986P Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP3986P pdf
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
AP3986P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
600V
1.4Ω
G ID 6A
S
Description
AP3986 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications. The TO-220 type provide
high blocking voltage to overcome voltage surge and sag in the toughest
power system with the best combination of fast switching,ruggedized design
and cost-effectiveness.
G
D
S
The TO-220 package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies, DC-AC converters and
high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
±30
6
3.3
20
92.6
20
6
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
1.35
62
Unit
/W
/W
1
200805051
Free Datasheet http://www.datasheet4u.com/



Advanced Power Electronics
Advanced Power Electronics

AP3986P Datasheet Preview

AP3986P Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP3986P pdf
AP3986P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=3A
VDS=480V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=3A
VDS=300V
VGS=10V
VDD=300V
ID=3A
RG=50Ω,VGS=10V
RD=100Ω
VGS=0V
VDS=25V
f=1.0MHz
600 -
-
- - 1.4
2-4
- 2.8 -
- - 100
- - 250
- - ±100
- 34 55
-6-
- 15 -
- 30 -
- 32 -
- 205 -
- 55 -
- 1310 2100
- 210 -
- 35 -
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Test Conditions
IS=3A, VGS=0V
IS=3A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 400 - ns
- 4.2 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Free Datasheet http://www.datasheet4u.com/


Part Number AP3986P
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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