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AP3R604GMT-HF-3 Datasheet N-channel Enhancement-mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK 5x6 package is specially designed for DC-DC converter applications, with a foot print that is compatible with the popular SO-8 and offers a backside heat sink and lower package profile.

S S D D D D S G PMPAK 5x6 Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TA=25°C ID at TA=70°C IDM PD at TC=25°C PD at TA=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ±20 120 29 23 250 83.3 5 4 Units V V A A A A W W mJ °C °C Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 28.8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 1.5 25 Units °C/W °C/W Ordering Information AP3R604GMT-HF-3TR RoHS-compliant halogen-free PMPAK5x6, shipped on tape and reel (3000pcs/reel) ©2008 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP3R604GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8 Compatible with Heatsink Low On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 40V 3.