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AP4002J Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP4002J datasheet PDF. This datasheet also includes the AP4002H variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP4002H-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

AP4002 series are specially designed as chopper regulator, DC/DC converter and power drive application.

The APEC MOSFET provide the best conbination of fast switching, ruggedized design and cost-effectiveness.

G D S TO-251(J) G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 2 8 20 0.16 20 2 -55 to 150 -55 to 150 Units V V A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Overview

AP4002H/J RoHS-compliant Product Advanced Power Electronics Corp.

More Datasheets from Advanced Power Electronics Corp

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AP4002H-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002I-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002P N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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