AP4002T Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for mercial-industrial applications. TO-92 D S Absolute Maximum Ratings Symbol VDS VGS ID@TL=25℃ IDM PD@TL=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current Rating 600 ±30 400 3 2 0.017 20 2 -55 to 150 -55 to 150 Units V V m A A W W/ ℃ m J A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Rthj-l Parameter Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-lead Value 150 60 Unit ℃/W ℃/W 201019072-1/4 Data & specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs .. Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Test Conditions VGS=0V, ID=1m A VGS=10V, ID=400m A VDS=VGS, ID=250u A VDS=10V, ID=400m A VDS=600V, VGS=0V VGS=±30V ID=2A VDS=480V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=10V f=1.0MHz Min. 600 2 - Typ. 570 12 2 5.5 10 12 52 19 375 170 45 Max. Units 5 4 100 ±1 19 600 V Ω V m S u A u A n C n C n C ns ns ns ns p F p F p F IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Tj=25℃, IS=2A, VGS=0V IS=2A, VGS=0V, d I/dt=100A/µs Min. - Typ. 340 2.2 Max. Units 1.5 V ns u C trr Qrr Notes: Reverse...