AP40T03GI Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM TO-252 package isolation is universally package preferred is universally for all preferred mercialfor all industrial surface mount mercial-industrial through applications hole applications. and suited for low voltage TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating 30 ±25 28 18 95 25 0.2 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5 62 Units ℃/W ℃/W Data and specifications subject to change without notice 201121051-1/4 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 30 1 - Typ. 0.02 16 9 2 6 7 56 16 5 610 160 117 1.5 Max. Units 25 45 3 1 25 ±100 15 980 2.3 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) .. Static Drain-Source On-Resistance VGS=10V, ID=18A VGS=4.5V, ID=14A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o VDS=VGS, ID=250u A VDS=10V, ID=18A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±25V ID=18A VDS=25V VGS=4.5V VDS=15V ID=18A RG=3.3Ω,VGS=10V RD=0.83Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge...