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AP4228M Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

www.DataSheet4U.com The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.

G1 S1 D1 G2 D2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating 30 ± 20 6.8 5.5 40 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.

62.5 Unit ℃/W Data and specifications subject to change without notice 201016031 AP4228M Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.

Overview

AP4228M Advanced Power Electronics Corp.

▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package S2 G2 D1 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26mΩ 6.

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