Datasheet4U Logo Datasheet4U.com

AP4409AGEM-HF Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

BVDSS RDS(ON) ID G -35V 7.5mΩ -14.5A D S Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified) Symbol Parameter Rating VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current3a, VGS @ 10V Drain Current3a, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation -35 +20 -14.5 -12 -50 2.5 Linear Derating Factor 0.02 TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3a Value 50 Unit ℃/W THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

Overview

Advanced Power Electronics Corp.

AP4409AGEM-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant D D D D SO-8 G.