Datasheet Details
| Part number | AP4411GM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 68.91 KB |
| Description | P-CHANNEL POWER MOSFET |
| Datasheet |
|
|
|
|
| Part number | AP4411GM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 68.91 KB |
| Description | P-CHANNEL POWER MOSFET |
| Datasheet |
|
|
|
|
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 25 -8.2 -6.5 -40 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Max.
AP4411GM Pb Free Plating Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G -30V 25mΩ -8.
| Part Number | Description |
|---|---|
| AP4411GM-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4411M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410AGM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410AGM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410GM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410GM-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410M | ENHANCEMENT MODE POWER MOSFET |
| AP4412GM | ENHANCEMENT MODE POWER MOSFET |
| AP4412M | ENHANCEMENT MODE POWER MOSFET |