Datasheet Details
| Part number | AP4429GM-HF |
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| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.83 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AP4429GM-HF Datasheet
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| Part number | AP4429GM-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.83 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AP4429GM-HF Datasheet
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 35 +20 18 13.7 72 2.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 200910122 Data and specifications subject to change without notice AP4429GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=18A VGS=4.5V, ID=12A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
AP4429GM-HF Halogen-Free Product Advanced Power Electronics Corp.
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