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AP4434GM Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current ,VGS @ 4.5V Rating 20 ±12 8.3 6.7 30 2 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current ,VGS @ 4.5V Pulsed Drain Current 1 3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

62.5 Unit ℃/W Data and specifications subject to change without notice 200607072-1/4 AP4434GM Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.

Overview

AP4434GM RoHS-compliant Product Advanced Power Electronics Corp.

▼ Low on-resistance D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 20V 18.5mΩ 8.3A D ▼ Capable of 2.

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