Datasheet4U Logo Datasheet4U.com

AP4800GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP4809 Stereo Headphone Amplifier Anachip
AP4829 Stabistors Invensys Sensor Systems
AP4830 Stabistors Invensys Sensor Systems
AP4835GM P-Channel 30V MOSFET VBsemi
AP4890B 1W AUDIO POWER AMPLIFIER APLUS

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP4800GEM N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4800GYT-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4800GYT-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4800AGM N-Channel MOSFET
AP4800CGM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com AP4800GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 25V 18mΩ 9A ID SO-8 S S S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Published: |