Datasheet Details
| Part number | AP4810GSM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 101.55 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet |
 AP4810GSM Datasheet
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| Part number | AP4810GSM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 101.55 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet |
AP4810GSM Datasheet
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Schottky Diode Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM VKA IF@TA=25℃ IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 11 9.3 50 30 1 25 2.5 2.0 -55 to 150 -55 to 150 Units V V A A A V A A W W ℃ ℃ Schottky Reverse Voltage Continous Forward Current Pulsed Diode Forward Current Max Power Dissipation (MOSFET) Max Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient (MOSFET) 3 Value 50 60 3 Unit ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient (Schottky) Data and specifications subject to change without notice 1 200910296 AP4810GSM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=10A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Recovery Time ▼ Fast Switching Performance D D D D N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) G 30V 13.
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