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AP50T10GJ-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP50T10GJ-HF datasheet PDF. This datasheet also covers the AP50T10GH-HF variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP50T10GH-HF-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP50T10GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP50T10GI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP50T10GM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP50T10GP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP50T10GP-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. AP50T10GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D BVDSS 100V RDS(ON) 30mΩ ID 37A S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.