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Advanced Power Electronics
Advanced Power Electronics

AP5521GH-HF Datasheet Preview

AP5521GH-HF Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP5521GH-HF pdf
Advanced Power
Electronics Corp.
AP5521GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
D1/D2
Fast Switching Performance
RoHS Compliant & Halogen-Free
S1
G1
S2
G2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
100V
150mΩ
3.1A
-100V
155m
-3.2A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3
Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
100 -100
+20 +20
3.1 -3.2
2.5 -2.5
12 -12
3.13
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
6
40
Unit
/W
/W
1
201501163



Advanced Power Electronics
Advanced Power Electronics

AP5521GH-HF Datasheet Preview

AP5521GH-HF Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP5521GH-HF pdf
AP5521GH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=250uA
VGS=10V, ID=2A
VGS=5V, ID=1A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current
VDS=10V, ID=2A
VDS=80V, VGS=0V
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=+20V, VDS=0V
ID=2A
VDS=80V
VGS=10V
VDS=50V
ID=2A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
100 - - V
- - 150 m
- - 250 mΩ
1 - 3V
- 2.8 -
S
- - 10 uA
- - +100 nA
- 10 16 nC
- 2 - nC
- 4 - nC
- 6.5 - ns
- 7 - ns
- 14 - ns
- 3.5 - ns
- 420 672 pF
- 60 - pF
- 40 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=2.4A, VGS=0V
IS=2A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 40 - ns
- 75 - nC
2


Part Number AP5521GH-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 8 Pages
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AP5521GH-HF pdf
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