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Advanced Power Electronics

AP60SL600AI Datasheet Preview

AP60SL600AI Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP60SL600AI
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP60SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID3,4
650V
0.6Ω
7A
G
DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
dv/dt
PD@TC=25
PD@TA=25
EAS
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
600
+20
7
4.4
18
50
26
1.92
36.7
15
V
V
A
A
A
V/ns
W
W
mJ
V/ns
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.8
65
Units
/W
/W
Data & specifications subject to change without notice
1
201505191




Advanced Power Electronics

AP60SL600AI Datasheet Preview

AP60SL600AI Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP60SL600AI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VGS=0V, ID=250uA
VGS=10V, ID=2A
VDS=VGS, ID=250uA
VDS=10V, ID=2A
VDS=480V, VGS=0V
VGS=+20V, VDS=0V
ID=2A
VDS=480V
VGS=10V
VDD=300V
ID=2A
RG=3.3
VGS=10V
VGS=0V
VDS=100V
.f=1.0MHz
f=1.0MHz
Test Conditions
IS=2A, VGS=0V
IS=7A, VGS=0V
dI/dt=50A/µs
600 -
-V
- - 0.6 Ω
2 - 5V
-5-S
- - 100 uA
- - +100 nA
- 18 28.8 nC
- 4.5 - nC
- 8 - nC
- 7 - ns
- 20 - ns
- 26 - ns
- 22 - ns
- 630 1008 pF
- 27 - pF
- 3 - pF
- 4.3 8.6 Ω
Min. Typ. Max. Units
- 0.8 -
V
- 280 -
ns
- 1.8 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Ensure that the junction temperature does not exceed TJmax..
5.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω
6.ISD ID, VDD BVDSS, starting TJ = 25oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



Part Number AP60SL600AI
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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AP60SL600AI Datasheet PDF





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