AP60SL600AI Datasheet | Advanced Power Electronics Corp

Description AP60SL600A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. VDS @ Tj,max. RDS(ON) ID3,4 650V 0.6Ω 7A G DS TO-220CFM(I) . Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 600 +20 7 4.4 18 50 26 1.92 36.7 15 V V A A A V/ns W W m J V/ns TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 4.8 65 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201505191 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol...