900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Advanced Power Electronics

AP60T03AH Datasheet Preview

AP60T03AH Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Advanced Power
Electronics Corp.
AP60T03AH/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
www.DataSheet4U.coFmast Switching
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60T03AJ) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
30V
12mΩ
45A
GD
S
TO-252(H)
GD
S
Rating
30
±20
45
32
120
44
0.352
-55 to 175
-55 to 175
TO-251(J)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.4
110
Units
/W
/W
Data and specifications subject to change without notice
200909033




Advanced Power Electronics

AP60T03AH Datasheet Preview

AP60T03AH Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP60T03AH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSheet4U.com
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
Gate Threshold Voltage
Forward Transconductance2
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=20A
VDS=24V
VGS=4.5V
VDS=15V
ID=20A
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.03 - V/
- - 12 mΩ
- - 25 mΩ
1 - 3V
- 25 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 11.6 - nC
- 3.9 - nC
- 7 - nC
- 8.8 - ns
- 57.5 - ns
- 18.5 - ns
- 6.4 - ns
- 1135 - pF
- 200 - pF
- 135 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 23.3 - ns
- 16 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.


Part Number AP60T03AH
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
PDF Download

AP60T03AH Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 AP60T03AH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
2 AP60T03AJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
3 AP60T03AP N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
4 AP60T03AS N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy