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Advanced Power Electronics

AP60T03GP-HF-3 Datasheet Preview

AP60T03GP-HF-3 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP60T03GP/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-resistance
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
30V
12m
45A
Description
D (tab)
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP60T03GS-HF-3 is in the TO-263 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
G
DS
The AP60T03GP-HF-3 is in the TO-220 through-hole package which is
used where a low PCB footprint or an attached heatsink is required.
Absolute Maximum Ratings
G
DS
TO-263 (S)
D (tab)
TO-220 (P)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
30
±20
45
32
120
44
0.35
-55 to 175
-55 to 175
Value
3.4
62
Units
V
V
A
A
A
W
W/°C
°C
°C
Units
°C/W
°C/W
Ordering Information
AP60T03GS-HF-3TR : in RoHS-compliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel)
AP60T03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200809253-3 1/6




Advanced Power Electronics

AP60T03GP-HF-3 Datasheet Preview

AP60T03GP-HF-3 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Advanced Power
Electronics Corp.
AP60T03GP/S-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BV DSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Forward Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=10V, ID=20A
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=20A
VDS=24V
VGS=4.5V
VDS=15V
ID=20A
RG=3.3Ω , VGS=10V
RD=0.75
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
30 - - V
- 0.03 - V/°C
- - 12 m
- - 25 m
1 - 3V
- 25 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 11.6 19 nC
- 3.9 - nC
- 7 - nC
- 8.8 - ns
- 57.5 - ns
- 18.5 - ns
- 6.4 - ns
- 1135 1816 pF
- 200 - pF
- 135 - pF
Source-Drain Diode
Symbol
VSD
I rr
Vrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle <2%.
Min. Typ. Max. Units
- - 1.3 V
- 23.3 - ns
- 16 - nC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/6


Part Number AP60T03GP-HF-3
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 6 Pages
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