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AP62T03GJ Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP62T03GJ datasheet PDF. This datasheet also includes the AP62T03GH variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP62T03GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G D □ G D S TO-252(H) S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 +20 54 38 120 47 0.31 20 20 -55 to 175 -55 to 175 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 3.2 62.5 110 Units ℃/W ℃/W ℃/W 1 200903124 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP62T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.

Overview

AP62T03GH/J RoHS-compliant Product Advanced Power Electronics Corp.

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