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AP6923O - P-Channel MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Full PDF Text Transcription

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AP6923O Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode A K A A P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET BVDSS RDS(ON) S G S D -20V 50mΩ -3.5A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D A G S K Absolute Maximum Ratings Symbol VDS VKA VGS ID@TA=25℃ ID@TA=70℃ IDM IF IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage (MOSFET and Schottky)) http://www.DataSheet4U.net/ Rating -20 20 ± 12 - 3.5 - 2.
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